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(1) (2) (2) (3)
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data * * * * * * * . . . specifically designed for general purpose amplifier and switching applications.
Complementary Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Lead Temperature for Soldering Purposes
Thermal Resistance -- Junction to Ambient
Thermal Resistance -- Junction to Case (2)
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25_C Derate above 25_C
Total Power Dissipation @ TC = 25_C (2) Derate above 25_C
RMS Isolation Voltage (3) (for 1 sec, R.H. < 30%, TA = 25_C)
Base Current -- Continuous
Collector Current -- Continuous
Base-Emitter Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Sustaining Voltage
Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T Collector-Emitter Sustaining Voltage -- VCEO(sus) 90 Volts 10 Amperes Rated Collector Current No Isolating Washers Required Reduced System Cost UL Recognized, File #E69369, to 3500 VRMS Isolation
Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. Proper strike and creepage distance must be provided.
Characteristic
Rating
v
Test No. 1 Per Fig. 4 Test No. 2 Per Fig. 5 Test No. 3 Per Fig. 6
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VISOL
VEBO
VCES
RJC
RJA
PD
PD
TL
IC
IB
- 55 to + 150
COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS
MJF3055 PNP MJF2955
Value
2 0.016
4500 3500 1500
62.5
Max
30 0.25
260
10
90
90
4
6
5
CASE 221D-02 TO-220 TYPE
Order this document by MJF3055/D
NPN
VRMS
Watts W/_C
Watts W/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
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MJF3055 MJF2955
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS (1)
DC Current Gain (ICE = 4 Adc, VCE = 4 Vdc) DC Current Gain (ICE = 10 Adc, VCE = 4 Vdc)
Current-Gain-Bandwidth Product (VCE = 10 Vdc, IC = 0.5 Adc, ftest = 500 kHz)
Base-Emitter On Voltage (IC = 4 Adc, VBE = 4 Vdc)
Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc)
Emitter-Base Leakage (VEB = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 90 Vdc, IE = 0)
Collector Cutoff Current (VCE = 90 Vdc, VBE = 0)
Collector-Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0)
2
IC, COLLECTOR CURRENT (AMPS) 0.5 0.3 0.2 0.4 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 0.8 1.2 1.6 hFE, DC CURRENT GAIN 20 10 1 3 2 5 2 0 0.1 1 VBE(sat) @ IC/IB = 10 TJ = 25C VCE(sat) @ IC/IB = 10 TJ = 150C
Figure 1. Maximum Forward Bias Safe Operating Area
50 3 5 10 20 30 2 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.2 0.3
VBE @ VCE = 3 V
CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE)
IC, COLLECTOR CURRENT (AMP)
0.5
PNP MJF2955
dc
1
Characteristic
1 ms
2
v 10%.
3
5 ms
5
100 s
Figure 3. "On" Voltages
100 10 100 300 200 500 0.6 0.8 1.2 1.4 0.4 0.2 30 20 10 50 1 0 0.1 5 0.01 - 55C VBE(sat) @ IC/IB = 10 TJ = 150C VCE(sat) @ IC/IB = 10 0.02 TJ = 25C 25C 0.2 0.3 VBE @ VCE = 2 V VCEO(sus) 0.05 0.1 2 0.2 0.5 1 IC, COLLECTOR CURRENT (AMP) VCE(sat)
Motorola Bipolar Power Transistor Device Data Figure 2. DC Current Gain
VBE(on) Symbol IC, COLLECTOR CURRENT (AMP) ICBO IEBO ICES hFE fT 0.5
PNP MJF3055
1 Min 20 5 90 -- -- -- -- -- -- 2
2
Max
100 --
1.5
1 2.5
--
--
VCE = 2 V
3 1 1 1
5 MHz 5 Unit Vdc Vdc Vdc --
Adc
Adc
Adc
10 10
MJF3055 MJF2955
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE
CLIP
CLIP
0.107" MIN LEADS
0.107" MIN LEADS
HEATSINK 0.110" MIN
HEATSINK
HEATSINK
Figure 4. Clip Mounting Position for Isolation Test Number 1
Figure 5. Clip Mounting Position for Isolation Test Number 2
Figure 6. Screw Mounting Position for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4-40 SCREW PLAIN WASHER
CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 7. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
Motorola Bipolar Power Transistor Device Data
3
MJF3055 MJF2955
PACKAGE DIMENSIONS
-T- F Q A
123
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78
-B-
C S U
H K -Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
CASE 221D-02 TO-220 TYPE ISSUE D
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
Motorola Bipolar Power Transistor Device Data
*MJF3055/D*
MJF3055/D

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